unisonic technologies co., ltd ut4822 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-149.d dual n-channel enhancement mode ? description the ut4822 can provide excellent r ds(on) and low gate charge by using advanced trench technology. the ut4822 is suitable for using as a load switch or in pwm applications. ? features * 30v/8.5a * low r ds(on) * reliable and rugged ? symbol (7) (8) d1 (4) g2 (2) g1 s1 (1) s2 (3) (5) (6) d2 ? ordering information ordering number lead free halogen free package packing ut4822l-s08-r UT4822G-S08-R sop-8 tape reel
ut4822 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-149.d ? pin configuration
ut4822 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-149.d ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current i d 8.5 a pulsed drain current i dm 40 a power dissipation p d 2 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction to ambient ja 74 110 /w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250ua 30 v drain-source leakage current i dss v ds =24v, v gs =0v 1 ua gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250ua 1 1.8 3 v v gs =10v, i d =8.5a 13.4 16 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =6a 21 26 m ? dynamic characteristics input capacitance c iss 1040 1250 pf output capacitance c oss 180 pf reverse transfer capacitance c rss v gs =0v,v ds =15v,f=1.0mhz 110 pf switching characteristics total gate charge q g 19.2 23 nc gate-source charge q gs 2.6 nc gate-drain charge q gd v ds =15v, v gs =10v, i d =8.5a 4.2 nc turn-on delay time t d(on) 5.2 7.5 ns turn-on rise time t r 4.4 6.5 ns turn-off delay time t d(off) 17.3 25 ns turn-off fall time t f v dd =15v, v gs =10v, r g =3 ? , r l =1.8 ? 3.3 5 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =1a, v gs =0v 0.76 1 v maximum continuous drain-source diode forward current i s 3 a reverse recovery time t rr i f = 8.5a, di f /dt = 100 a/ s 16.7 21 ns reverse recovery charge q rr 6.7 10 nc
ut4822 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-149.d ? typical characteristics v ds =5v 125 25 2.00e+01 1.60e+01 1.20e+01 8.00e+00 4.00e+00 0.00e+00 1.5 2 2.5 3 3.5 4 gate source voltage, v gs (v) transfer characteristics 4.5v 4v 10v 3.5v v gs =3v 30 25 20 15 10 5 0 0123 45 drain source voltage, v ds (v) on-resistance characteristics pulse width 80us, duty cycle 0.5%. pulse width 80us, duty cycle 0.5%. 25 125 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 source current, i s (a) 0.00.20.40.60.81.0 source drain voltage, v sd (v) body-diode characteristics i d =8.5a 125 25 50 40 30 20 10 24 6 810 gate source voltage, v gs (v) on-resistance, r ds(on) (m ) on-resistance vs. gate-source voltage pulse width 80us, duty cycle 0.5%. pulse width 80us, duty cycle 0.5%. v ds =15v i d =8.5a 10 8 6 4 2 0 04 8 12 16 20 gate source voltage, v gs (v) gate charge, q g (nc) gate-charge characteristics c iss c oss c rss 1500 1250 1000 750 500 250 0 05 10 15 20 25 30 drain source voltage, v ds (v) capacitance (pf) capacitance characteristics pulse width 80us, duty cycle 0.5%. pulse width 80us, duty cycle 0.5%.
ut4822 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-149.d ? typical characteristics(cont.) power (w) drain current, i d (a) 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) normalized maximum transient thermal impedance normalized transient thermal resistance, ja in descending order d=0.5,0.3,0.1,0.05,0.02,0.01,single pulse d=t on /t t j,pk =t a +p dm . ja . ja ja =62.5 /w single pulse p dm t on t v gs =4.5v v gs =10v 26 24 22 20 18 16 14 12 10 0 5101520 drain current, i d (a) on-resistance, r ds(on) (m ) on-resistance vs. drain current and gate voltage
ut4822 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-149.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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